The recent realizations of a topological valley phase in a photonic crystal, an analog of gapped valleytronic materials in an electronic system, are limited to the valley Chern number of one. In this paper, we present a type of valley phase that can have a large valley Chern number of two or three. The valley phase transitions between the different valley Chern numbers (from one to three) are realized by changing the configuration of the unit cell. We demonstrate that these topological phases can guide the wave propagation robustly along a sharply bent domain wall. We believe our results are promising for the exploration of new topological phenomena in photonic systems.